Telecoms, Datacoms, Wireless, IoT


Pulsed power transistor

29 April 2015 Telecoms, Datacoms, Wireless, IoT

For L-band pulsed avionics applications, M/A-COM Technology Solutions has introduced the MAGX-000912-650L0x, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor in standard flange or earless flange packaging.

Boasting a mean time to failure (MTTF) of 600 years, the robust transistor is gold metalised and operates in the 960 to 1215 MHz frequency range. It is internally matched and features 650 W of peak output power with20 dB typical gain and 62% drain efficiency. Other features include flat gain versus frequency performance and a common-source configuration for broadband class AB operation.

The MAGX-000912-650L0x’s semiconductor structure is designed to achieve a high drain breakdown voltage, which enables reliable and stable operation at 50 V in extreme mismatched load conditions. It is relevant for civilian and military pulsed avionics amplifier applications.

For more information contact Tobie Muller, Accutronics, +27 (0)11 782 8728, [email protected], www.accutronics.co.za



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