L-band pulsed power transistor

26 June 2013 Telecoms, Datacoms, Wireless, IoT

The MAGX-001214-500L00 is a gold-metalised pre-matched GaN on silicon carbide transistor optimised for pulsed L-band radar applications.

The M/A COM Technology Solutions device provides 500 W of output power with 19 dB of gain and 55% efficiency.

The transistor boasts very high breakdown voltages, which allows for operation at 50 V under more extreme load mismatch conditions. Operating across the 1200 MHz–1400 MHz frequency range, it is a highly robust transistor, boasting a mean time to failure (MTTF) of 5,3 x 106 hours, and is available as both flanged and flangeless packaged devices.

Further reading:

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