RF Micro Devices has added five new distributed amplifiers for broadband, high-frequency applications. The new amplifiers deliver high gain and output power and are designed to support a wide array of high-frequency commercial, military and space applications. Based upon GaAs pseudomorphic high electron mobility transistor (pHEMT) technology, the SDA-1000 through 5000 series range in operating frequency from DC-20 GHz to DC-35 GHz and represent the first RFMD amplifiers with operation above 20 GHz. The devices boast P1dB and gain figures (at midband) ranging from 17 to 26 dBm and from 12 to 17,1 dB, respectively. Supply voltage is either 5 V, 6,5 V or 8 V, depending on the model, with supply current between 80 and 400 mA.
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