Analogue, Mixed Signal, LSI


GaN high-power RF transistors

26 July 2006 Analogue, Mixed Signal, LSI

RFMD has introduced a family of high electron mobility transistor (HEMT) high-power transistors that represents the achievement of a baseline 0,5 μm GaN (Gallium Nitride) high-power transistor process. It is currently sampling to top-tier cellular infrastructure and WiMAX base station customers. These high power devices show excellent peak drain efficiency up to 67% at UMTS and up to 60% at WiMAX frequency bands. According to RFMD, it has achieved high gain of 16 dB, high power density of up to 4 W/mm at 28 V and 1000-hour high temperature reliability results. The GaN HEMT transistors include: the RF3820 (8 W), RF3912 (60 W), RF3913 (90 W) and RF3914 (120 W) for the wireless cellular market; and the 2,5 GHz RF3916 (50 W), RF3917 (75 W), RF3918 (100 W) and 3,5 GHz RF3821 (8 W), RF3919 (50 W) for the emerging WiMAX base station segment.



Credit(s)



Share this article:
Share via emailShare via LinkedInPrint this page

Further reading:

3,75 GHz RF inductor
RF Design Passive Components
The ceramic chip wire wound inductor from Coilcraft features a DC resistance of 1 O, a DC current of 175 mA, and a self-resonant frequency of 3,75 GHz.

Read more...
Infineon launches Edge Ai software solution
Altron Arrow Analogue, Mixed Signal, LSI
Infineon has introduced DEEPCRAFT, a new software solution category brand for Edge AI and machine learning, after the company recognised the huge potential of Edge AI for the market.

Read more...
IoT in a Box
RF Design Telecoms, Datacoms, Wireless, IoT
RAKwireless and Datacake have collaborated on a solution called ‘Real IoT in a Box’ to address the complexities of deploying IoT solutions, particularly when it comes to LoRaWAN.

Read more...
Direction-finding antenna board
RF Design Telecoms, Datacoms, Wireless, IoT
u-blox’s ANT-B11 Bluetooth 5.1 direction-finding antenna board is a compact Bluetooth Low-Energy angle-of-arrival antenna and sensor board combined.

Read more...
DC to 40 GHz termination
RF Design Enclosures, Racks, Cabinets & Panel Products
The TS400HM from Inmet by Spectrum Control is a 50 O termination that operates from DC to 40 GHz, and can handle an average input power of 1 W.

Read more...
Multi-band satellite modules
RF Design Telecoms, Datacoms, Wireless, IoT
The UBX-R52/S52 Series from u-blox are Multi-band LTE-M/NB-IoT/Satellite Modules that operate in 3GPP cellular bands from 450 MHz to 2,46 GHz and 1,5 to 1,7 GHz for satellite connectivity.

Read more...
16-bit voltage output denseDAC
Altron Arrow Analogue, Mixed Signal, LSI
The AD5766 uses a versatile four-wire serial interface that operates at clock rates of up to 50 MHz for write mode, and is compatible with SPI, QSPI, MICROWIRE, and DSP interface standards.

Read more...
IO Ninja debugging tool
RF Design News
Tibbo has released a major update to IO Ninja, its versatile communications debugging tool for Windows, Linux, and macOS.

Read more...
5G RedCap and its current environment
RF Design Telecoms, Datacoms, Wireless, IoT
5G RedCap is expected to be a key driver of the transition from 4G to 5G technology for many IoT applications.

Read more...
2 GHz RF amplifier
RF Design Telecoms, Datacoms, Wireless, IoT
The GRF9461 from Guerrilla RF is an RF gain block that operates from 40 MHz to 2,0 GHz and provides a gain of 19,8 dB with a noise figure of 1,8 dB.

Read more...