Analogue, Mixed Signal, LSI


Low noise dual SiGe mixer has high linearity

20 October 2004 Analogue, Mixed Signal, LSI Products & Solutions

Maxim has introduced a high performance, fully integrated, dual SiGe mixer. Designed specifically for 2,5 G and 3 G wireless-infrastructure applications, the MAX9995 delivers a superior combination of linearity, noise performance, and component integration. This single device provides two independent downconversion channels, each with an IIP3 of 25,6 dBm, a conversion gain of 6,2 dB, and a low noise figure of 9,7 dB. In addition, the device's superior 2RF-2LO performance is an industry best at 66 dBc for an RF level of


-10 dBm, and 61 dBc for an RF level of -5 dBm, claims Maxim.

Intended for 1700 MHz to 2200 MHz W-CDMA/UMTS, DCS/PCS/EDGE, cdma2000, and TDMA base-station applications where high linearity and low noise figure are critical for enhanced receiver sensitivity and blocker immunity, the device offers a wide 40 MHz to 350 MHz IF frequency range with a 1400 MHz to 2000 MHz low-side LO injection range. Optimised for high-side LO injection, the MAX9995A also supports a 1900 MHz to 2400 MHz LO frequency range.

As a complete SiGe downconverter, the MAX9995 integrates two state-of-the-art mixer cores, four amplifiers, three baluns, an LO switch and splitter, plus dozens of discrete components in a compact 6 x 6 mm, 36-pin, thin QFN. Through this integration, Maxim says the total board space used by the mixer is reduced by a factor of two, and the discrete part count is reduced by 45%.

Because the device provides more than 6 dB of conversion gain, the designer can eliminate a complete IF amplifier stage within the receiver lineup. Filtering requirements of close-in harmonics is also eased, leading to simpler and more cost-effective filter designs.

Frequency hopping is supported with the integrated SPDT LO switch with switching speeds of under 50 ns and >50 dB of LO1-to-LO2 isolation. The on-board, 0 dBm drive LO buffer provides ±3 dB drive-variance control, yielding stable gain, NF, and IIP3 performance over temperature, supply, and input power. The device has superior gain spread of ±0, 5 dB from nominal at room temperature, and ±0,75 dB over the extended temperature range. IIP3 spread is ±0,4 dB over temperature. Channel-to-channel isolation is specified at 44 dB.



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