Analogue, Mixed Signal, LSI


Higher breakdown voltage driver power amps

14 July 2004 Analogue, Mixed Signal, LSI Logistics (Industry)

RF Micro Devices' new series of gallium arsenide heterojunction bipolar transistor (GaAs HBT) driver power amplifiers are a series of multiband platform devices that feature higher breakdown voltages for superior output power, efficiency and linearity. Comprised of the RF3800, RF3802 and RF3805, RFMD says that these are highly linear amplifiers that use a low-cost, thermally enhanced aluminium nitride package to provide potential cost savings of greater than 30% compared to currently available silicon LDMOS transistors assembled in costly ceramic metal-flange packages. They provide up to +37 dBm of output power (P1dB), high power efficiency (greater than 35% at P1dB), high linearity (+50 dBm OIP3) and higher gain (14 to 20 dB) under linear class AB operation. The devices span the 450 MHz to 2200 MHz frequencies.



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