Ever wondered what the future of GaN-based USB charging looks like? Infineon’s CoolGaN SG HEMT 100 V for consumer devices may well feature in that future.
The device enables high power density in a smaller size and lighter weight than its predecessors. Powering all devices needing 5 to 48 V with a single charger small enough to fit into a pocket, is becoming a reality.
System application engineer, Gökhan Sen, and senior VP and GM, Richard Kunčič, discuss the future of GaN-based USB charging in the Infineon lab during a test of a 240 W demonstrator for USB 3.1’s extended power range. Visit http://bitly.ws/znyy to view the video discussion.
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