ST expands SiC agreement with Wolfspeed
28 July 2021
Power Electronics / Power Management
Cree’s Wolfspeed business and STMicroelectronics have expanded an existing multi-year, long-term silicon carbide (SiC) wafer supply agreement. The amended agreement, which calls for Cree to supply ST with 150 mm bare and epitaxial wafers over the next several years, is now worth more than $800 million.
This latest expansion will complement the other external capacity ST has secured and the internal capacity it is ramping up. The agreement will help meet the high volumes required by its product manufacturing operations in the next years, with a large number of automotive and industrial customer programmes in high volumes or ramping up.
The adoption of SiC-based power solutions is rapidly growing across the automotive market as the industry moves from internal combustion engines to electric vehicles, enabling greater system efficiencies that result in electric cars with longer range and faster charging, while reducing cost, lowering weight and conserving space.
In the industrial market, silicon carbide solutions enable smaller, lighter and more cost-effective designs, converting energy more efficiently to unlock new clean energy applications. To better support these growing markets, device manufacturers are interested in securing access to high-quality silicon carbide substrates to support their customers.
Further reading:
Power efficiency and robustness in electronics design
Power Electronics / Power Management
Mouser Electronics recently announced a new eBook in collaboration with Analog Devices highlighting essential strategies for optimising power systems.
Read more...
USB Type-C-powered controllers
Future Electronics
Power Electronics / Power Management
Diodes Incorporated has released two USB Type-C PD 3.1 extended power range sink controllers that can be embedded into battery-powered devices.
Read more...
Multicell battery monitoring
Altron Arrow
Power Electronics / Power Management
The LTC6811 from Analog Devices is a multicell battery stack monitor that measures up to 12 series connected battery cells with a total measurement error of less than 1,2 mV.
Read more...
Full telemetry in tiny DC-DC converters
RS South Africa
Power Electronics / Power Management
The FS160* series of µPOL DC-DC converters from TDK all offer full telemetry, provide increased performance, and are remarkable for extraordinary power density in the smallest sizes.
Read more...
Power IC supplies 1650 W
EBV Electrolink
Power Electronics / Power Management
Power Integrations has announced a two-fold increase in power output from the HiperLCS-2 chipset with the new device now being able to deliver up to 1650 W of continuous output power.
Read more...
High-voltage step-down DC-DC converter
Altron Arrow
Power Electronics / Power Management
The MAX17793 is a high-efficiency, high-voltage, synchronous step-down DC-DC converter with integrated MOSFETs operating over an input voltage range of 3 to 80 V.
Read more...
High-voltage contactors
RS South Africa
Power Electronics / Power Management
TDK Corporation has announced two new additions to its high-voltage contactor portfolio for harsh environments: the HVC43MC with integrated mirror contact and the HVC45 with enhanced short-circuit current handling capability.
Read more...
Chokes rated at 36 A
RS South Africa
Power Electronics / Power Management
TDK Corporation has launched the EPCOS SurfIND series, a new range of current-compensated ring core double chokes for high currents and surface mounting.
Read more...
RF arrestor provides robust protection
RFiber Solutions
Power Electronics / Power Management
NexTek’s range of coaxial RF surge and lightning arrestors are designed and built to provide robust protection for any radio or coaxial RF transmission application.
Read more...
Wide-Bandgap Developer Forum 2025
Power Electronics / Power Management
To give designers the ultimate in design flexibility, the entire range of WBG power semiconductors will be provided including discretes, modules, and highly integrated solutions ranging from 40 V to 700 V for GaN and 400 V to 3,3 kV for SiC.
Read more...
printer friendly version