Isolated power semiconductor package patented

Electronics Technology

20 November 2002 Electronics Technology

Power semiconductor maker Ixys has obtained an important US patent stemming from its invention of the high-performance isolated power semiconductor assembly technology. The patent embodies a novel isolated device structure in which a direct bonded copper (DBC) substrate is used, instead of a copper slug, in the standard TO package outline.

The technology allows Ixys to introduce its advanced ISOPLUS power MOSFETs, IGBTs, thyristors and diodes into the market where Ixys is using its internally developed and manufactured DBC substrates. The technology will enable a new generation of electrically isolated power devices, in which the backside metal of said package is electrically isolated from the corresponding backside of the semiconductor die in the package, but has excellent thermal conduction.

According to the manufacturer, the Isoplus devices are lighter, easier to mount without isolation foils and better in thermal conduction thus improving the performance to cost ratio for the industry. The devices demonstrate lower coupling capacitance to the common ground, thus reducing injected EMI in high frequency switching applications, a common problem in modern power supply circuits. Superior thermal expansion also eliminates the thermal fatigue phenomena that plagues large die power MOSFETs and IGBTs.

For more information contact Avnet Kopp, 011 809 6100, [email protected], www.avnet.co.za

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Isolated power semiconductor package patented

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