Power transistor gate driver

12 September 2018 Power Electronics / Power Management

With 26 V maximum gate-drive output voltage and optional separate turn-on/turn-off outputs or integrated active Miller clamp, STMicroelectronics’ STGAP2S single-channel galvanic isolated gate driver can control silicon-carbide (SiC) or silicon MOSFETs and IGBTs across a range of switching topologies. The device has 4 A rail-to-rail outputs for crisp, efficient switching, even with high-power inverters. Input-to-output propagation delay is within 80 ns for precise PWM control at the high switching frequencies suited to SiC devices. High dV/dt common-mode transient immunity prevents energy-sapping spurious switching.

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