Taiwan Semiconductor has introduced new 40 V and 60 V N-channel MOSFET families with a rated junction temperature of 175°C.
The parts feature logic or standard gate threshold voltage levels, and a wide range of RDS(on) levels for flexible and robust power switching designs.
Qgd/Qgs and Qrr parameters have been optimised to improve figure of merit and reduce electromagnetic interference (EMI). The MOSFETS are packaged in a small form factor PDFN56 package for improved power density. They exhibit high surge current capability during cold load startup and in-rush.
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