Power Electronics / Power Management


SiC MOSFET providing ultra-fast switching

15 November 2017 Power Electronics / Power Management

Littelfuse introduced its first series of silicon carbide (SiC) MOSFETs, the latest addition to the company’s growing power semiconductor line following its acquisition of Monolith Semiconductor. The LSIC1MO120E0080 Series, with a voltage rating of 1200 V and ultra-low (80 mΩ) on-resistance, is optimised for high-frequency switching applications, providing a combination of ultra-low switching losses and ultra-fast switching speeds that is unavailable with traditional power transistor solutions.

When compared with silicon devices that have the same rating, the SiC MOSFET series enables substantially greater energy efficiency, reduced system size/weight, and increased power density in power electronics systems. It also offers superior robustness and exceptional performance, even at high operating temperatures (150°C).

Typical applications for these new SiC MOSFETs include power conversion systems such as solar inverters, switch mode power supplies, UPS systems, motor drives, high voltage DC-DC converters, battery chargers and induction heating.

For more information contact Jeva Narian, Arrow Altech Distribution, +27 (0)11 923 9600, [email protected], www.arrow.altech.co.za



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