Epitaxy enhancements improve efficiency of OSRAM LEDs
18 May 2016
Opto-Electronics
OSRAM Opto Semiconductors has made advancements that considerably improve the luminous efficacy of its high-power LEDs by reducing the unwanted droop effect at high currents. This development was made possible by optimised epitaxial processes. At a current density of 3 A/mm² the quantum efficiency of the LEDs is now a full 7,5% above the previous level.
The unwanted drop in efficiency as the current density increases, commonly referred to as ‘droop’, limits the maximum luminous efficacy of indium gallium nitride based light emitting diodes (LEDs) and is therefore the subject of intense research and development activities worldwide. Under laboratory conditions a typical luminous flux of 740 lm was verified in a QFN LED package – an improvement of around 7,5% compared with previous typical values (6200 K, Cx 0,319, Cy 0,323, single-chip version LDxyz). At low current densities of 0,35 A/mm² the benefit of the optimised LEDs is still around 4%.
The new processes are being used in all LEDs from OSRAM Opto Semiconductors based on UX:3 chip technology and will also have a positive impact on other high-power products. Their integration into the existing product portfolio will also be rolled out over time.
For more information contact Petrus Booyens, OSRAM Opto Semiconductors, +27 (0)79 525 1779, [email protected], www.osram-os.com
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