Infineon Technologies has introduced three new gallium arsenide (GaAs) PHEMT (pseudomorphic high electron mobility transistor) switches, the CSH210, CSH210R and CSH210P, for present and next-generation multiband mobile phones, WLAN and Bluetooth products. The benefits PHEMT switch technology include very low insertion loss, excellent isolation and high linearity while consuming near-zero control current. They can be biased, using only positive control voltages, and do not require an external reference voltage. The CSH210 (standard logic) and CSH210R (reverse logic) are general-purpose SPDT switches in ultra- miniature SOT363 package (2 x 2 mm). The CSH210 and CSH210R achieve 0,3 dB and 0,4 dB insertion loss at 1 GHz and 2 GHz respectively. Typical isolation is better than 24 dB up to 1 GHz and better than 20 dB up to 2 GHz. Both achieve a P (-1 dB) of 30 dBm when biased with +3 V. The CSH210P is a higher power version of the CSH210.
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