DSP, Micros & Memory


DDR3 low-voltage SDRAM

12 August 2015 DSP, Micros & Memory

New from Alliance Memory comes a monolithic high-speed, low-voltage CMOS DDR3 synchronous DRAM (DDR3L SDRAM) with an 8 Gb density in a 96-ball, 9 x 14 mm, lead-free FBGA package. The AS4C512M16D3L is arranged in 16 banks of 512 Mb and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximise performance. The chip runs off a single +1,35 V power supply and boasts transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.



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