600 V GaN transistors
10 June 2015
Power Electronics / Power Management
ON Semiconductor and power conversion specialist Transphorm, building on their previously announced partnership to bring gallium nitride (GaN) based power solutions to market, announced the introduction of the co-branded NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS) 600 V GaN cascode transistors and a 240 W reference design that utilises them.
With typical on-resistances of 290 m and 150 m, the parts are offered in a TO-220 package for easy integration with customers’ existing circuit board manufacturing capabilities. Both have been qualified using JEDEC standards and are in mass production.
The NCP1397GANGEVB (TDPS250E2D2) evaluation board is offered as a complete reference design for customers to implement and evaluate GaN cascode transistors in their power designs. The boost stage delivers 98% efficiency and utilises the NCP1654 power factor correction controller. The LLC DC-DC stage uses a NCP1397 resonant mode controller to offer 97% full-load efficiency. This performance is achieved while running at 200+ kHz and is also able to meet EN55022 Class B EMC performance.
For more information contact Arnold Perumal, Avnet South Africa, +27 (0)11 319 8600, [email protected], www.avnet.co.za
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