IXYS announced an expansion of its high-voltage power MOSFET product portfolio with the addition of new 2000 V N-channel devices. With a current rating of 1 A, they are specifically designed for high-voltage, high-speed power conversion applications.
Due to the positive temperature coefficient of their on-state resistance, these MOSFETs can be operated in parallel, thereby eliminating the need for lower-voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability and PCB space saving.
The new parts are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and X-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid.
The MOSFETs are available in TO-247, TO-247HV and TO-263HV packages, the latter two with increased creepage distances between leads, making them able to withstand higher voltages. The part numbers include IXTH1N200P3, IXTH1N200P3HV and IXTA1N200P3HV.
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