Alliance Memory introduced a new line of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) with densities of 512 Mb (AS4C32M16D2) and 1 Gb (AS4C64M16D2, AS4C128M8D2) in 60-ball, 8 by 10 by 1,2 mm and 84-ball, 8 by 12,5 by 1,2 mm FBGA packages. They provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in automotive, industrial, consumer and networking products requiring high memory bandwidth.
The AS4C32M16D2 is internally configured as four banks of 8M words x 16 bits. The AS4C64M16D2 and AS4C128M8D2 are internally configured as eight banks of 8M x 16 bits and 16M x 8 bits, respectively. The chips all offer a synchronous interface, operate from a single +1,8 V (±0,1 V) power supply, and are lead- and halogen-free.
Offered in commercial (0°C to +85°C), industrial (-40°C to + 95°C) and automotive (-40°C to +105°C) temperature ranges, the DDR2 SDRAMs feature a fast clock rate of 400 MHz and a data rate of 800 M bps/pin. They provide programmable read or write burst lengths of 4 or 8.
An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximise performance.
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