Vishay has extended its offering of TrenchFET p-channel Gen III power MOSFETs with a new device claiming to offer the lowest on-resistance ever for a p-channel MOSFET.
Designed to increase efficiency in mobile computing devices, the -20 V Si7157DP offers on-resistance of 0,0016 Ω and 0,0020 Ω at -10 V and -4,5 V ratings, respectively.
The part is optimised for load and battery switches in power management applications for notebook computers. Today’s designers are under pressure to make these devices thinner and lighter, which means reducing battery sizes and, consequently, their run times. At the same time, features such as graphics and Wi-Fi increase battery usage, making power efficiency a paramount goal.
The low on-resistance of the Si7157DP allows designers to achieve lower voltage drops and conduction losses in their circuits, enabling more efficient use of power and longer battery run times – especially in peak load conditions – while its compact 6,15 by 5,15 mm PowerPAK SO-8 package footprint area saves valuable PCB space.
The device’s lower voltage drop at peak currents also provides a larger voltage margin over the UVLO (under-voltage lockout) level, helping prevent undesired under-voltage lockout conditions with the load.
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