Renesas Electronics has released 13 new products in its 7th-generation insulated gate bipolar transistor (IGBT) lineup. They include the RJH/RJP65S series for 650 V and RJP1CS series for 1250 V.
The new power semiconductor devices are used in systems that convert DC into AC power (inverters), and are designed for applications that handle high voltages and large currents, such as power conditioners (power converters) for solar power generators and industrial motors.
The 7th-generation technology, based on an enhanced thin wafer process, achieves a trade-off between conduction, switching losses and robustness to withstand short circuit conditions.
Compared to the previous 6th-generation technology used in product series of 600 V and 1200 V, the 7th-generation portfolio has higher voltage ratings of 650 V and 1250 V to address low-temperature performance requirements and over-voltage blocking capability.
The new IGBTs are suitable in motor controls applications thanks to their 10 μs rated short circuit tolerance.
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