Vishay introduced the first devices in its next-generation TrenchFET Gen IV family of 30 V n-channel power MOSFETs. Utilising a new high-density design, the SiRA00DP, SiRA02DP, SiRA04DP and SiSA04DN offer on-resistance down to 1,35 mΩ at 4,5 V and low Miller charge, Qgd, down to 1,8 nC in the PowerPAK SO-8 and 1212-8 packages.
TrenchFET Gen IV MOSFETs offer a new structure that utilises a very high-density design without significantly increasing the gate charge, overcoming a problem often associated with high cell count devices. They offer low total gate charge and therefore low on-resistance times gate charge figures of merit (FOM) down to 56 nC-Ω at 4,5 V for the SiRA04DP.
The SiRA00DP, SiRA02DP and SiRA04DP are offered in the 6,15 x 5,15 mm PowerPAK SO-8 package while the SiSA04DN offers similar efficiency with a third of the size in the 3,30 x 3,30 mm PowerPAK 1212-8 package. All of the devices offer a Qgd/Qgs ratio of 0,5 or less; this lower ratio can help to prevent shoot-through by lowering gate-induced voltages.
The MOSFETs are optimised for high power density DC/DC converters, synchronous rectification, synchronous buck converters and OR-ing applications. Typical end products include switch mode power supplies, voltage regulator modules (VRMs), POLs, telecom bricks, PCs and servers.
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