Automotive-grade power MOSFETs

11 July 2012 Power Electronics / Power Management

NXP Semiconductors introduced a new family of automotive power MOSFETs based on the company’s Trench 6 technology. Fully AEC-Q101 qualified, the devices have successfully completed extended lifetime testing at 175°C for more than 1600 hours – significantly exceeding Q101 requirements – as well as offering very low PPM levels.

The first products in the new family will be available in D2PAK, at voltage grades of 30 V, 40 V, 60 V, 80 V and 100 V, with excellent RDSon performance across the range. Future Trench 6 releases will be made in all other automotive packages – including NXP’s high-reliability, high-performance Power-SO8 LFPAK56 – as part of a major portfolio expansion to offer complete application flexibility. The range will cover virtually all automotive applications, from simple lamp-driving to the sophisticated needs of power control in powertrain, body and chassis systems.

Trench 6 further enhances switching performance compared to previous generations of TrenchMOS, enabling very low QGD for a given RDSon, which is ideal for DC-DC switching applications in the car. NXP automotive power MOSFETs also offer true logic level variants for every product – a crucial feature that combines low on-resistance performance with threshold voltage tolerance, to ensure that the MOSFET can be fully controlled at high temperatures.

Further reading:

Power efficiency and robustness in electronics design
Power Electronics / Power Management
Mouser Electronics recently announced a new eBook in collaboration with Analog Devices highlighting essential strategies for optimising power systems.

Read more...

---

USB Type-C-powered controllers
Future Electronics Power Electronics / Power Management
Diodes Incorporated has released two USB Type-C PD 3.1 extended power range sink controllers that can be embedded into battery-powered devices.

Read more...

---

Multicell battery monitoring
Altron Arrow Power Electronics / Power Management
The LTC6811 from Analog Devices is a multicell battery stack monitor that measures up to 12 series connected battery cells with a total measurement error of less than 1,2 mV.

Read more...

---

Full telemetry in tiny DC-DC converters
RS South Africa Power Electronics / Power Management
The FS160* series of µPOL DC-DC converters from TDK all offer full telemetry, provide increased performance, and are remarkable for extraordinary power density in the smallest sizes.

Read more...

---

Power IC supplies 1650 W
EBV Electrolink Power Electronics / Power Management
Power Integrations has announced a two-fold increase in power output from the HiperLCS-2 chipset with the new device now being able to deliver up to 1650 W of continuous output power.

Read more...

---

High-voltage step-down DC-DC converter
Altron Arrow Power Electronics / Power Management
The MAX17793 is a high-efficiency, high-voltage, synchronous step-down DC-DC converter with integrated MOSFETs operating over an input voltage range of 3 to 80 V.

Read more...

---

High-voltage contactors
RS South Africa Power Electronics / Power Management
TDK Corporation has announced two new additions to its high-voltage contactor portfolio for harsh environments: the HVC43MC with integrated mirror contact and the HVC45 with enhanced short-circuit current handling capability.

Read more...

---

Chokes rated at 36 A
RS South Africa Power Electronics / Power Management
TDK Corporation has launched the EPCOS SurfIND series, a new range of current-compensated ring core double chokes for high currents and surface mounting.

Read more...

---

RF arrestor provides robust protection
RFiber Solutions Power Electronics / Power Management
NexTek’s range of coaxial RF surge and lightning arrestors are designed and built to provide robust protection for any radio or coaxial RF transmission application.

Read more...

---

Wide-Bandgap Developer Forum 2025
Power Electronics / Power Management
To give designers the ultimate in design flexibility, the entire range of WBG power semiconductors will be provided including discretes, modules, and highly integrated solutions ranging from 40 V to 700 V for GaN and 400 V to 3,3 kV for SiC.

Read more...

---