IGBTs for induction heating

9 November 2011 Power Electronics / Power Management

International Rectifier has launched a pair of ultra-fast trench insulated gate bipolar transistors (IGBTs) optimised for induction heating and resonant switching applications such as welding and high-power rectification.

The new 1200 V IGBTs utilise IR’s proven thin-wafer trench technology to offer low VCE(on) and ultra-fast switching to reduce power dissipation and achieve higher power density. In addition, the devices feature a 1300 V repetitive peak rating for added system reliability. The IGBTs are co-packaged with a low forward-voltage, high peak current, soft forward-recovery diode optimised for resonant zero current turn-on operation.

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