Vishay has introduced new 40 V and 60 V n-channel TrenchFET power MOSFETs in the SO-8 and PowerPAK SO-8 packages.
The 60 V SiR662DP offers on-resistance of 2,7 mΩ at 10 V and 3,5 mΩ at 4,5 V and an FOM (figure of merit) of 172,8 mΩ-nC at 10 V and 105 mΩ-nC at 4,5 V. The 40 V SiR640DP offers on-resistance of 1,7 mΩ at 10 V and 2,2 mΩ at 4,5 V and an FOM of 128 mΩ-nC at 10 V and 76 mΩ-nC at 4,5 V.
Both devices are built on a new silicon technology utilising an optimised trench density and a unique gate structure. For designers, their low on-resistance translates into lower conduction losses for reduced power consumption, especially at heavy loads. Their low FOMs reduce switching losses in high-frequency and switching applications, particularly at light loads and in standby mode.
The SiR662DP and SiR640DP are intended for secondary-side synchronous rectification in DC/DC and AC/DC converters, primary-side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters and mechanical relay replacement applications. Typical end products will include telecom power supplies, industrial automation and professional gaming systems, uninterruptible power supplies (UPS) and consumer applications.
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