high-speed CMOS synchronous DRAMs (SDR) with densities of 64 Mb (AS4C4M16S), 128 Mb (AS4C8M16S) and 256 Mb (AS4C16M16S). The devices are optimised for industrial, communications, medical and consumer products requiring high memory bandwidth, and are particularly well-suited to high-performance PC applications.
Internally configured as four banks of 1M, 2M or 4M word x 16 bits with a synchronous interface, the devices operate from a single 3,3 V power supply, and are lead and halogen free. They provide programmable read or write burst lengths of 1, 2, 4, 8 or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximise performance.
Packaged in a 54-pin, 400-mil plastic TSOP II, the new SDRs offer a fast access time from clock down to 4,5 ns at a 5 ns clock cycle, and clock rates from 143 MHz to 200 MHz.
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