UHF transistor

10 November 2010 Telecoms, Datacoms, Wireless, IoT

NXP Semiconductors has announced the availability of an ultra high frequency (UHF) RF power transistor, a 600 W LDMOS device for broadcast transmitters and industrial applications. For a DVB-T signal over the full UHF band from 470 to 860 MHz, the BLF888A can deliver 120 W average power with efficiencies greater than 31%. Featuring high linearity, gain of 21 dB and ruggedness corresponding to VSWR greater than 40:1, the transistor is suitable for advanced digital transmitter applications such as DVB-T.

The performance of the BLF888A is enabled by NXP’s 50 V LDMOS process technology in combination with advanced thermal concepts, resulting in high power density and thermal resistance as low as 0,15 K/W. The new transistor is available in two versions: a bolt-down package (BLF888A) and an earless package (BLF888AS) which enables a more compact PCB design. The BLF888AS can be soldered to achieve a further decrease in junction temperature.

For more information contact Petrus Booyens, Avnet Kopp, +27 (0)11 809 6100, [email protected], www.avnet.co.za

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