Vishay has released four new 500 V, 16 A N-channel power MOSFETs with low 0,38 W maximum on-resistance at a 10 V gate drive, and a gate charge of 68 nC, in the TO-220AB, TO-220 FULLPAK, D²PAK and TO-247AC packages.
The low on-resistance of the SiHP16N50C (TO-220AB), SiHF16N50C (TO-220 FULLPAK), SiHB16N50C (D2PAK) and SiHG16N50C (TO-247AC) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges and LLC topologies in a wide range of applications, including notebook computer AC adapters, PC power supplies, LCD TVs and open-frame power supplies. Gate charge times on-resistance, a key figure of merit for MOSFETs used in power conversion applications, is a low 25,84 Ω-nC.
The new n MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimise on-state resistance and withstand high-energy pulses in the avalanche and commutation modes. Compared to previous-generation MOSFETs, the new devices also offer faster switching speeds and reduced switching losses. They are compliant to RoHS Directive 2002/95/EC and 100% avalanche tested for reliable operation.
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