POL converters

10 November 2010 Power Electronics / Power Management

Diodes Incorporated has expanded its DIOFET product portfolio with the introduction of two dual-channel devices. The DMS3017SSD and DMS3019SSD integrate an optimised control MOSFET with a proprietary DIOFET into a single SO8 package to provide a high efficiency solution for point-of-load (POL) converters in consumer and industrial applications.

The low-side DIOFET device integrates a power MOSFET and anti-parallel Schottky diode into a single die. The typical low RDS(ON) of the DIOFET ensures that conduction losses are kept to a minimum, while its forward voltage (VSD) is 25% lower than comparable MOSFET/Schottky solutions, thereby further lowering conduction losses through the body diode during PWM dead time. The high-side MOSFET included in the DMS3017SSD and DMS3019SSD features low gate charge and fast switching, enabling high-side switching losses to be minimised.

The device characteristics enable them to deliver a point-of-load conversion efficiency of 94% under full load conditions, while at the same time reducing the parasitic inductance associated with co-packaged or externally mounted Schottky diodes.

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