Power Electronics / Power Management


Low-side driver ICs

29 September 2010 Power Electronics / Power Management

ON Semicondoctor recently introduced a family of low-side protected MOSFETs that feature high levels of integrated protection.

Qualified in accordance with the AEC-Q101 standard, devices in the NCV840x family are suitable for use in switching applications operating in harsh automotive and industrial environments.

Designed for robust and reliable operation, the NCV8401, NCV8402, NCV8402D (dual die), NCV8403 and NCV8405 all have an extensive range of self-protection features. These include temperature and current limiting, electrostatic discharge (ESD) protection, and integrated drain-to-gate clamping for over-voltage protection.

NCV840x drivers can be used to switch a variety of resistive, inductive and capacitive loads and allow design engineers to replace electromechanical relays or discrete circuits with an alternative that is more compact and robust and that has a longer operational life. All of the devices have a logic level input. The NCV8401, NCV8402/D and NCV8403 have a drain-to-source (VDSS) voltage rating of 42 V and maximum drain currents (ID) of 33 A, 2 A and 15 A respectively. The NCV8405 is rated to 40 VDSS and has a maximum ID rating of 6 A. Gate-to-source voltage for all devices is ±14 V.

All members of the new family exhibit low on-resistance (RDS(ON)) values that enable energy efficient system designs. Respective RDS(ON) values (at 10 V) are 23 m for the NCV8401; 165 m for the NCV8402/D; 53 m for the NCV8403; and 90 m for the NCV8405. The devices all have a wide operating temperature range of -40°C to 150°C and high electrostatic resistance levels (4000 V at a junction temperature of 25°C). Turn-off temperature limit is set at 175°C when VGS is 5 V and 165°C when VGS is 10 V.





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