Hamamatsu Photonics has developed a new range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity. Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface which act to reduce reflections and increase the surface area of the active element. This process is said to drastically increase the sensitivity in wavelengths longer than 800 nm.
The S11498 series is a family of PIN photodiodes utilising this new technology, offering a high sensitivity of 0,4 A/W at 850 nm – twice the sensitivity of a typical silicon photodiode, making it suitable for a wider range of applications. The devices are available in 0,2 mm and 0,1 mm diameter active area types, which offer 1,5 GHz and 2,0 GHz bandwidths respectively. Both feature low capacitances and are packaged in high-reliability TO-18 packages.
Due to the increased sensitivity in the near-infrared region, the S11498 IR-enhanced PIN photodiodes are suitable for a wide range of applications, including fibre communications, high-speed measurements and optical interconnection.
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