Telecoms, Datacoms, Wireless, IoT


Power amplifier for LTE/WCDMA

23 June 2010 Telecoms, Datacoms, Wireless, IoT

New from RFHIC is an 80 W GaN power amplifier for LTE/WCDMA. With an internally matched GaN on SiC (silicon carbide) transistor as the key building block, the amplifier exhibits 50 dB gain at 48 V. The amplifier works throughout the 2110-2140 MHz range (30 MHz bandwidth) and achieves 35% or higher efficiency rating by utilising the Doherty design and digital pre-distortion (DPD) technique.

The module includes DC/DC, detector, coupler and isolator functions within a small footprint of 170 x 175 x 28 mm.

For more information contact Andrew Hutton, RF Design, +27 (0)21 555 8400, [email protected], www.rfdesign.co.za



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