International Rectifier has introduced the IRF6706S2PbF and IRF6798MPbF DirectFET MOSFET chipset that provides high efficiency for 12 V input synchronous buck applications. The IRF6798MPbF medium can DirectFET provides on-state resistance (RDS(on)) of less than 1 mΩ, enabling high efficiency across the entire load range. The new device features a monolithically integrated Schottky diode that reduces losses associated with body diode conduction and reverse recovery losses. The IRF6798MPbF also delivers low gate resistance (Rg) of 0,25 Ω to eliminate Cdv/dt related shoot-through.
The IRF6706S2PbF small can DirectFET also features low charge and low RDS(on) to reduce switching and conduction losses, and very low Rg for fast switching.
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