Fairchild Semiconductor has developed a new single P-Channel MOSFET that enables high levels of efficiency and a small form factor. The FDZ197PZ offers an RDS(ON) value of 64 mΩ at VGS = -4,5 V in a 1 x 1,5 mm footprint. Its WL-CSP package provides good power dissipation and conduction loss characteristics, as well as 4 kV ESD capability.
The WL-CSP package features 6 x 300 μm lead-free solder balls for the board connection, providing excellent electrical and thermal resistance values. It features a low package height of only 0,65 mm when mounted, facilitating slimmer designs.
For more information contact EBV Electrolink, +27 (0)21 402 1940, [email protected], <a href="http"//www.ebv.com" target="_blank"> www.ebv.com</a>
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