International Rectifier has launched a series of 25 V and 30 V N-channel trench HEXFET power MOSFETs featuring enhanced switching performance for synchronous buck converter and battery protection.
The new MOSFETs are offered in a Power QFN package to provide improved power density when compared with an SO-8 package while keeping the same pin-out configuration. Depending upon application, the dual SO-8 MOSFETs allow a ‘two for one’ exchange to reduce component count.
Single and dual N-channel MOSFETs are available. Single devices are offered in a PQFN 5 x 6 mm and 3 x 3 mm package optimised for high volume production in addition to D-PAK, I-PAK and SO-8 packages, while dual devices are offered in an SO-8 package. The new devices are RoHS compliant and can be offered Halogen free.
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