Vishay has expanded its family of Gen III TrenchFET power MOSFETs with the release of a new 25 V n-channel device offering very low on-resistance and on-resistance times gate charge in the PowerPAK SO-8 package type.
The SiR476DP features a maximum on-resistance of 2,1 mW at a 4,5 V gate drive and 1,7 mW at a 10 V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 89,25 nC at 4,5 V.
The device is targeted for use as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Vishay has also released the new 25 V SiR892DP and SiR850DP n-channel power MOSFETs. Respectively, the devices offer on-resistance at 4,5 V of 4,2 mW and 9 mW, on-resistance at 10 V of 3,2 mW and 7 mW, with typical gate charges of 20 nC and 8,4 nC.
All three new power MOSFETs are offered in the PowerPAK SO-8 package type. The devices are lead-free, halogen-free, and RoHS-compliant.
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