Ramtron has launched the first parallel device in a family of new parallel and serial F-RAM products that offer high-speed read/write performance, low-voltage operation and optional device features.
The newest device in the V-family is the FM28V100, a 1 Megabit, 2,0 to 3,6 V, parallel non-volatile RAM in a 32-pin TSOP-I package that features fast access, NoDelay writes, virtually unlimited read/write cycles and low power consumption. The device is suitable as an upgrade from 1 Mb battery-backed SRAM in industrial control, metering, medical, automotive, military, gaming and computing applications, among others.
The device is a 128 K x 8 non-volatile ferroelectric random access memory (F-RAM) that reads and writes like a standard SRAM and retains data after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM.
In-system operation of the FM28V100 is similar to other RAM devices, allowing it to be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by toggling a chip enable pin or by simply changing the address. The device operates over the full industrial temperature range of -40°C to +85°C.
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