To address the need for smaller components in portable devices, Vishay has released a new 20 V p-channel TrenchFET power MOSFET in a MICRO FOOT chipscale package with what it claims is the industry’s lowest profile and on-resistance for this device type.
The Siliconix Si8441DB offers an ultra-compact 0,59 mm profile and a footprint area of 1,5 x 1 mm and offers an on-resistance rating at 1,2 V. Typical applications for the new device include load switching and battery protection in portable devices such as cellphones, PDAs, digital cameras, MP3 players and smartphones.
The Si8441DB offers a low on-resistance range from 0,600 Ω at 1,2 V VGS to 0,080 Ω at 4,5 V VGS, with a maximum gate-source voltage of ±5 V. The low on-resistance rating of 1,2 V reduces the need for level shift circuitry, thus saving space in portable electronics designs.
Also newly released in the same package, is the 20 V p-channel Si8451DB. Rated for a maximum gate-to-source voltage of 8 V, on-resistance for the Si8451DB ranges from 0,200 Ω at 1,5 V to 0,080 Ω at 4,5 V.
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