New from Cypress Semiconductor are 2 Mbit and 8 Mbit non-volatile static random access memories (nvSRAMs). The new devices feature access times as low as 20 ns, infinite read, write and recall cycles, and 20-year data retention. They offer an optimal solution for applications requiring continuous high-speed writing of data and absolute non-volatile data security. Systems requiring nvSRAM functionality include servers, RAID applications, harsh-environment industrial controls, automotive, medical and data communications.
The CY14B102 2-Mbit and CY14B108 8-Mbit devices are ROHS-compliant and directly replace SRAM, battery-backed SRAM, EPROM and EEPROM devices, offering reliable non-volatile data storage without batteries. Data transfers from the SRAM to the device’s non-volatile elements take place automatically at power down. On power up, data is restored to the SRAM from the non-volatile memory. Both operations are also available under software control. The new nvSRAMs are manufactured on Cypress’s S8 0,13 micron SONOS (silicon oxide nitride oxide silicon) embedded non-volatile memory technology, enabling high densities and fast access times and performance.
The new devices have a realtime clock feature that combines low standby oscillator current with high performance integrated memory, enabling event time-stamping supported by non-volatile memory.
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