Fast-recovery MOSFETs

23 July 2008 Power Electronics / Power Management

STMicroelectronics has announced a new family of fast-recovery MOSFETs that combine enhanced switching performance with low on-resistance, aimed at meeting the needs of efficiency-focused applications, including renewable-energy controllers.

The first device in the new Super-Junction FDmesh II family is the STW55NM60ND, a 600 V N-channel MOSFET offering on-resistance of 0,060 Ω in the standard TO-247 package. The peak drain current of 51 A allows one MOSFET to replace multiple components in converters for space-constrained applications such as telecom and server systems. Combined with savings in thermal management due to reduced losses, this allows designers to significantly increase power density.

To deliver these performance enhancements, ST has improved its FDmesh super-junction architecture by combining a vertical structure with the conventional strip MOSFET, which also features a faster and more rugged intrinsic body diode. In addition to reducing on-resistance and recovery time, further improvements increase switching efficiency and save driving losses by reducing gate capacitance, gate charge and gate input resistance. The devices also have high dv/dt rating for higher reliability during switching, particularly in bridge-type topologies including zero voltage switching (ZVS) under light-load conditions.

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