Infineon has announced two new LDMOS RF power transistors targeting wireless infrastructure applications, such as WiMAX, in the 2,5 GHz to 2,7 GHz frequency band.
The PTFA260851E/F 85 W FET features 14 dB gain and 22% efficiency at 16 W average output power, under WiMAX signal conditions, while the PTFA261702E 170 W FET features 15 dB gain and 20% efficiency at 32 W average output power.
The 170 W transistor's architecture provides electrically isolated halves that ease use in Doherty power amplifier applications. The device can also be used in a push-pull configuration for extended bandwidth performance.
Both products are available in lead-free, RoHS-compliant ceramic packages. Operating at 28 V, these transistors provide broadband internal matching, and are capable of handling a 10:1 VSWR (voltage standing wave ratio) at CW (continuous wave) power output and 28 V supply voltage.
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