Power MOSFETs for DC-DC converters
25 June 2008
Power Electronics / Power Management
New from STMicroelectronics are two new Power MOSFETs, intended for demanding DC-DC converter applications, which use the latest version of ST's proprietary STripFET technology to deliver extremely low conduction and switching losses, up to 3 W lower in a typical voltage regulator module, and said to achieve the lowest figure of merit - FOM = Rds(on) x Gate Charge (Qg) - among comparable competitive devices.
The STD60N3LH5 and STD85N3LH5 are 30 V (BVDSS) devices. With Qg of just 8,8 nC and Rds(on) of 7,2 mΩ at 10 V, the STD60N3LH5 is an ideal choice as a control FET in non-isolated DC-DC step-down converters. The 4,2 mΩ Rds(on) at 10 V of the STD85N3LH5, with a Qg of 14 nC, makes it an optimal choice as a synchronous FET. Both devices are produced in DPAK and IPAK packages and are suitable for notebook, server, telecom and networking applications.
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