Power Electronics / Power Management


MOSFET and IGBT drivers

30 April 2008 Power Electronics / Power Management

ON Semiconductor has expanded its driver IC portfolio with the introduction of four new devices - the NCP5106A/B, NCP5104, NCP5111 and NCP5304. These new high voltage, high-side and low-side drivers are specified from -40°C to +125°C, and can operate with an input voltage up to 600 V. All the devices feature a dV/dt immunity of 50 V/ns and are compatible with 3,3 V and 5 V input logic. They use the bootstrap technique to ensure a proper drive of the high-side power switch and provide rugged design. The NCP5104, NCP5106B, NCP5111, NCP5304 are high voltage power gate drivers that provide two outputs for direct drive of two N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration. The NCP5106A can be used in any other high-side or low-side configuration.



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