New mid-voltage power MOSFETs range has efficient design
4 April 2007
Power Electronics / Power Management
Ixys’ new family of 55 V to 100 V mid-voltage power MOSFETs incorporate a proprietary cell-design that significantly reduces on-resistance, enabling improved efficiency.
Improvements in cell design such as optimisations in cell density, structure, topology and feature sizes result in improved performance upon previous generations. Lower RDS(on) and gate charge, increased ruggedness and faster switching speeds allow for more power efficient devices in the 'mid-voltage' arena.
Ixys provides a wide selection of these mid-voltage MOSFETs. Voltages include 55 V, 75 V, 85 V and 100 V, while currents range from 44 A to 280 A. They are offered in a number of different packages, including the standard TO-247 and a variety of Ixys Isoplus packages, which provide integral backside case isolation. The IXTC240N055T (55 V, RDSon = 0,004 Ω with isolated Rthjc = 1,0 K/W) and IXTF200N10T (100 V, RDSon = 0,006 Ω with isolated Rthjc = 0,75 K/W) are just some examples of the superior electrical and thermal performance of the new MOSFETs.
Mid-voltage power MOSFETS will find homes in many rugged hard switching applications. These devices are designed to meet the robust conditions commonly required by the automotive or industrial sector, while also taming the power hungry applications found in consumer electronics. Frequent applications include DC-DC conversion, motor control and power distribution systems. Their low gate charge makes them ideal for high power applications, since lower gate charge increases the power efficiency by reducing the amount of driving current required. This low gate drive requirement also makes them suited for paralleling at higher power levels.
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