Mid-voltage mosfets optimised for switching converters
6 September 2006
Analogue, Mixed Signal, LSI
International Rectifier has introduced N-channel 60, 80 and 100 V Hexfet mosfets for switching converter applications that improve the figure of merit for resistance multiplied by charge by as much as 36%. Intended for use in today's networking and communications systems, IRF7853PbF, IRF7854PbF, and IRF7855PbF are designed for AC-DC secondary-side synchronous rectification, isolated medium-power DC-DC applications.
"A mosfet's on-state resistance and total gate charge performance have a first-order effect on overall circuit efficiency. Our three new SO-8 devices use IR's Trench MOSFET technology to deliver substantial reductions in RDS(on) and Qg to bring significant system-level benefits to converter circuits," says Mario Battello, marketing manager for SMPS Products at International Rectifier.
Together with IR's low-voltage mosfets and controller ICs, these mid-range mosfets form secondary-side chipsets for medium-power, converter applications. In addition, when combined with the SmartRectifier IR1167 in AC-DC power supplies such as laptop adaptors, for example, these new SO-8 devices can replace two of their large TO-220 mosfet counterparts and their associated heatsinks, improving overall system efficiency by as much as 1%, says IR.
The 100 V IRF7853 is also optimised for wide-range communication bus input (36 V to 75 V) primary-side bridge topologies in isolated DC-DC bus converters. The 80 V IRF7854 is useful for active ORing and hot-swap applications. All three of the mosfets are designed for secondary-side synchronous rectification in 5-19 Vout flyback converter and resonant half-bridge applications and are suitable for isolated DC-DC applications as primary-side switches in forward or push-pull topologies for 18-36 Vin isolated DC-DC converters.
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