MOSFET improves conduction losses by up to 30%
25 January 2006
Power Electronics / Power Management
International Rectifier's IRF6648, a 60 V DirectFET power MOSFET featuring a maximum on-state resistance of 7,0 mΩ (VGS = 10 V) is claimed to enable up to 30% lower device conduction losses compared to the industry standard. A single IRF6648 in SO-8 footprint can deliver performance similar to two competing 'enhanced SO-8' devices operating in parallel, it says. These devices are ideal for isolated DC-DC converters commonly used in telecommunications and networking systems.
When the IRF6648 is used on the secondary side of a regulated 48 V input, 12 V output, 240 W isolated converter the power density of 4,5 W/cm³ can be increased an additional 15%. This is enabled by taking advantage of the dual-sided cooling capability of the DirectFET MOSFET packaging technology with the addition of a heatsink. The metal-can construction of this technology enables dual-side cooling that effectively doubles the current handling capacity of high frequency DC-DC buck converters.
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