High frequency IGBT co-pack is enhanced

18 May 2005 Power Electronics / Power Management

International Rectifier's IRGP50B60PD, a 600 V non-punch-through (NPT) insulated gate bipolar transistor (IGBT) is co-packaged with an enhanced 25 A Hexfred diode capable of operating at switching speeds up to 150 kHz.

The IRGP50B60PD expands the company's WARP2 product line-up of high frequency IGBT/Hexfred diode Co-Pack devices. The new device has been enhanced with a higher current Hexfred diode designed to handle high reverse current conditions. In addition, the new Co-Pack device features high efficiency performance for high current (1 kW to 12 kW), high frequency SMPS circuits in telecom and server systems. Applications include power factor correction and full bridge primary switching, high power UPS, welding and industrial switching applications.

The improvements in switching performance, combined with optimised (positive) thermal coefficient characteristics and the lower gate turn-on charge, enables higher current density. Positive temperature coefficient ensures safe and reliable current sharing when operated in parallel.

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