New Schottkys said to outperform traditional Ultrafast rectifiers
9 February 2005
Power Electronics / Power Management
ON Semiconductor has pushed the Schottky voltage barrier above 200 V with the introduction at the recent Power Electronics Technology Conference, of the first 250 V silicon Schottky for plasma/LCD television, power supply, consumer and automotive applications. The company also revealed two new 200 V Schottky rectifiers in SMC packages.
The quiet operation and fast recovery time of these 200 V and 250 V Schottkys outperform Ultrafast rectifiers reverse recovery time, forward voltage and softness claims On Semi. As such, the devices simplify system design and offer a more cost-effective solution for the growing number of 200-250 V applications - including plasma television drive circuits, automotive body electronics and computer power supplies.
Traditionally, Ultrafast rectifiers have been used for energy recovery, fly-back surge and output rectification in applications where the reverse voltage can exceed 200 V. An example of a key application is energy recovery circuits for plasma TV panels. In this application, switching frequencies are in the order of 250 kHz and voltages run greater than 180 V peak-to-peak. This necessitates a low forward drop rectifier with the best possible switching. The energy recovery rectifiers should have a minimum breakdown voltage in the order of 250 V (allowing for derating and spikes). Ultrafast rectifiers have traditionally been used in this application, but with advanced silicon Schottky technology ON Semiconductor achieved lower forward voltage (Vf <1,0) and addressed both the switching loss and EMI issues that are also significant at these (200-250 kHz) frequencies.
The new devices are: 40 A, 250 V Schottky in T0-220 package and die (MBR40250); 4 A, 200 V Schottky in SMC package (MBRS4201); 3 A, 200 V Schottky in SMC package (MBRS3201).
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