GaAs Schottky diodes have improved performance

2 June 2004 Power Electronics / Power Management Security Services & Risk Management

Ixys offers a new generation of high speed Gallium Arsenide Schottky diodes. An extended product range offering breakdown voltage from 180 to 600 V, a much reduced reverse current and higher current density, are the advantages of the second generation of GaAs Schottky rectifiers, says the company. High frequencies up to 1 MHz or more, extremely low reverse recovery current, high temperature operating up to 175°C and a very small temperature dependence are still the dominating features of GaAs Schottky diodes compared with other technologies.

Today, the most important demands for new electronic products are space saving and power density increasing with simultaneous cost reduction. The use of GaAs Schottky rectifiers, especially for high frequency switch mode power supplies, UPSs and power factor correction (PFC) systems, is the best alternative to improve efficiency and performance.

The diagram shows which improvements are possible and how to benefit from GaAs diodes. GaAs products are available in several standard packages - surface mount and leaded - and also including in Ixys' industry recognised Isoplus packages.

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