Alliance Semiconductor has released a 36-megabit (36 Mb) synchronous SRAM family manufactured using state-of-the-art 0,13 µm copper process technology. According to Alliance these SRAMs provide higher densities, lower access latency, and lower power consumption to increase system performance in a variety of applications and end markets including storage systems, wireless infrastructure and networking.
The 36 Mb device configurations include 1 Mbx32, 1 Mbx36, and 2 Mbx18 operating at either 3,3 V or 2,5 V. The devices are user configurable to operate in either pipelined mode or in flow-through mode. In pipelined mode, the devices operate with clock rates up to 250 MHz and with clock access time less than 2,6 ns. In flow-through mode the clock access time is less than 6,0 ns. Both pipelined mode and flow-through mode offer active current of 450 mA and standby currents of 100 mA.
These SRAM devices support fast clock speeds with no turnaround delay (NTD) or synchronous burst interfaces. In addition, Alliance offers both the 100-lead TQFP and the space saving 165-ball BGA industry standard packaging options. They are available in 166, 200 and 250 MHz.
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