Optimised MOSFETs for datacoms and telecoms applications
7 April 2004
Power Electronics / Power Management
International Rectifier (IR) has added three devices to its DirectFET MOSFET family. The IRF6623, IRF6620, and IRF6609 20 V N-channel devices are optimised for VRM 10 power systems and high frequency, high current DC-DC converters.
Such converters are targeted at next generation Intel and AMD processors in high-end desktop computers and servers, as well as advanced telecom and datacom systems.
The IRF6623 features enhanced control MOSFET performance, with a 30% reduction in device on-resistance (RDS(on)) and gate charge (Qg) product, and is 50% smaller than other high-performing 20 V control MOSFETs on the market. In addition, the RDS(on) and Qg product at 4,5 V is 48,4 mΩ-nC, and the Miller charge (Qgd) is 4,0 nC, reducing switching losses.
IR's IRF6620 is ideal for synchronous MOSFET applications up to 35 A. The IRF6620 combines very low Qg, Qgd, and reverse recovery charge (QRR) with a 30% improvement in RDS(on) compared to other currently available high-performing 20 V synchronous MOSFETs.
Typical RDS(on) for this product is 2,1 mΩ (2,7 mΩ max) at 10 V. The IRF6609 is designed for the highest performance in high-current (33 A or more) synchronous MOSFET applications and combines very low Qg, Qgd and ultra-low QRR with typical device RDS(on) of 1,6 mΩ (2,0 mΩ max) at 10 V.
The 'metal can' construction of the DirectFET package reduces die-free package resistance and enables double-sided cooling. As a result, the package offers design advantages not previously available in standard plastic discrete packages.
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